![]() In: Anais VI Congresso Brasileiro de Energia Solar (VI CBENS) 2016 Belo Horizonte. Desenvolvimento do campo retrodifusor seletivo de alumínio e boro em células solares de silício. 1-9.ġ4 Crestani T, Zanesco I, Moehlecke A, Razera R A Z, Aquino J, Model JCM, et al. In: Proceedings of the SWC 2015 ISES Solar World Congress 2015 Daegu, Coreia do Sul. Analysis of the silicon dioxide passivation and forming gas annealing in silicon solar cells. Passivated contacts to laser doped p+ and n+ regions. 20% efficient screen-printed cells with spin-ondielectric-passivated boron back-surface field. 2014 568:1-5.ġ1 Das A, Meemongkolkiat V, Kim DS, Ramanathan S, Rohatgi A. Selective deposition contact patterning using atomic layer deposition for the fabrication of crystalline silicon solar cells. Modulation of atomic-layer-deposited Al2O3 film passivation of silicon surface by rapid thermal processing. Progress in Photovoltaics: Research and Applications. Surface passivation of crystalline silicon solar cells: a review. The path to 25% silicon solar cell efficiency: history of silicon cell evolution. Status of selective emitters for p-type c-Si solar cells. Solar cells: operating principles, technology and system applications. Bow in screen-printed back-contact industrial silicon solar cells. Efficiency improvement of crystalline silicon solar cells with a back surface field produced by boron and aluminum co-doping. Analysis of aluminum back surface field at different wafer specifications in crystalline silicon solar cells. A simple theory of back surface field (BSF) solar cells. Analyzing these devices, we also concluded that the passivation was effective in the p+ region, doped with boron, as well as in the phosphorus emitter. The solar cells produced with TB of 970☌ and passivation achieved the efficiency of 16.0%, due to the increasing of the fill factor. The passivation enhanced the efficiency due to the increase of the open circuit voltage and the passivation is effective only in the emitter. Solar cells were processed with boron diffusion temperature (TB) of 950☌. The selective back surface field was formed by boron diffusion in whole rear face of the silicon wafer and the aluminum paste was deposited by screen printing to form the metal grid and the selective emitter. The goal of this paper is to analyze the influence of passivation with SiO2 in the phosphorus emitter and in the selective back surface field of aluminum and boron of n+pp+ solar cells processed in p-type Czochralski silicon wafers, solar grade. The selective back surface field in solar cells processed in p-type silicon wafers enables the increasing of the efficiency and avoids the typical bowing in solar cells with homogeneous back surface field formed by aluminum paste. Para a TB de 970☌, as células solares com passivação alcançaram a eficiência de 16,0%, devido ao aumento no fator de forma e a passivação foi eficaz na região p+ dopada com boro e no emissor de fósforo. Para a temperatura de difusão de boro (TB) de 950☌, observou-se que a passivação resultou em um aumento da eficiência devido ao aumento da tensão de circuito aberto e que a passivação somente foi eficaz no emissor n+. O campo retrodifusor seletivo foi formado pela difusão de boro em toda a face posterior da lâmina de silício e por serigrafia foi depositada a pasta de alumínio, somente nas trilhas metálicas. O objetivo deste trabalho é analisar a influência da passivação com SiO2 no emissor de fósforo e no campo retrodifusor seletivo de alumínio e boro de células solares n+pp+ processadas em lâminas de silício Czochralski tipo p, grau solar. O campo retrodifusor seletivo em células solares processadas em lâminas de silício tipo p possibilita aumentar a eficiência, ao mesmo tempo em que evita o abaulamento, típico em células solares com campo retrodifusor homogêneo formado por pasta de alumínio.
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